High electron mobility in SiGelSi n-MODFET structures on sapphire substrates
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چکیده
For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 cm2N-sec at an electron carrier density (ne) of 1.6~10’2 cm2 was obtained. At 250 mK, the mobility increases to 13,313 cm2N-sec (ne=1.33~10’2 cm-2) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.
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تاریخ انتشار 2003